FLL357ME

RF Power Field-Effect Transistor, 1Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2Pin

FLL357ME

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参数
型号编码FLL357ME
说明RF Power Field-Effect Transistor, 1Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2Pin
品牌Sumitomo
封装CASE ME

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