RF Power Field-Effect Transistor, 1Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2Pin
| 参数 | 值 |
|---|---|
| 型号编码 | FLM5964-4F |
| 说明 | RF Power Field-Effect Transistor, 1Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2Pin |
| 品牌 | Sumitomo |
| 封装 | CASE IB |
